tm february 2011 FCA36N60NF n-chan nel mosfet, frfet ?2011 fairchild semiconductor corporation FCA36N60NF rev. a www.fairchildsemi.com 1 supremos tm FCA36N60NF n-channel mosfet, frfet 600v, 36a, 95m features ?r ds(on) = 80m ( typ.)@ v gs = 10v, i d = 18a ? ultra low gate charge ( typ. qg = 86nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchild?s next generation of high voltage super-junction mosfets, employs a deep trench filling process that differentiates it fr om preceding multi-epi based tech- nologies. by utilizing this adv anced technology and precise pro- cess control, supremos provi des world class rsp, superior switching performance and ruggedness. this supremos mosfet fits the industry?s ac-dc smps requirements for pfc, server/telecom power, fpd tv power, atx power, and industrial power applications. d g s gs d to-3pn mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCA36N60NF units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current continuous (t c = 25 o c) 34.9 a continuous (t c = 100 o c) 22 i dm drain current pulsed (note 1) 104.7 a e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current 12 a e ar repetitive avalanche energy 3.12 mj dv/dt peak diode recovery dv/dt (note 3) 50 v/ns mosfet dv/dt ruggedness 100 p d power dissipation (t c = 25 o c) 312 w derate above 25 o c2.6w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCA36N60NF units r jc thermal resistance, junction to case 0.40 o c/w r cs thermal resistance, case to heat sink (typical) 0.24 r ja thermal resistance, junction to ambient 40 *drain current limited by maximum junction temperature
FCA36N60NF n-chan nel mosfet, frfet FCA36N60NF rev. a www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quantity FCA36N60NF FCA36N60NF to-3pn - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v,t j = 25 o c600--v bv dss t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 o c - 0.60 - v/ o c i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 10 a t j = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 3.0 3.7 5.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 18a - 80 95 m g fs forward transconductance v ds = 20v, i d = 18a - 39 - s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 3191 4245 pf c oss output capacitance - 145 195 pf c rss reverse transfer capacitance - 5 8 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 81 - pf c oss eff. effective output capacitance v ds = 0v to 480v, v gs = 0v - 338 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 18a, v gs = 10v (note 4) -86112nc q gs gate to source gate charge - 16 - nc q gd gate to drain ?miller? charge - 36 - nc esr equivalent series resistance (g-s) drain open, f=1mhz - 1.2 - t d(on) turn-on delay time v dd = 380v, i d = 18a r g = 4.7 (note 4) -2764ns t r turn-on rise time - 17 44 ns t d(off) turn-off delay time - 92 194 ns t f turn-off fall time - 4 18 ns i s maximum continuous drain to source diode forward current - - 36 a i sm maximum pulsed drain to source diode forward current - - 108 a v sd drain to source diode forward voltage v gs = 0v, i sd = 18a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 18a di f /dt = 100a/ s - 166 - ns q rr reverse recovery charge - 1.3 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 12a, r g = 25 , starting t j = 25 c 3. i sd 36a, di/dt 1200a/ s, v dd 380v, starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FCA36N60NF n-chan nel mosfet, frfet FCA36N60NF rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 1 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 246810 0.2 1 10 100 200 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 1836547290108 50 75 100 125 150 *notes: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 600 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 20406080100 0 2 4 6 8 10 v ds = 480v v ds = 300v *notes: i d = 18a v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc]
FCA36N60NF n-chan nel mosfet, frfet FCA36N60NF rev. a www.fairchildsemi.com 4 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.40 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature figure 11. transient thermal response curve -100 -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 18a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 100 500 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c ] t 1 p dm t 2
FCA36N60NF n-chan nel mosfet, frfet FCA36N60NF rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCA36N60NF n-chan nel mosfet, frfet FCA36N60NF rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCA36N60NF n-chan nel mosfet, frfet FCA36N60NF rev. a www.fairchildsemi.com 7 mechanical dimensions to-3pn
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